Invention Grant
- Patent Title: Thin film transistor array and method of manufacturing the same
- Patent Title (中): 薄膜晶体管阵列及其制造方法
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Application No.: US12890324Application Date: 2010-09-24
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Publication No.: US08173494B2Publication Date: 2012-05-08
- Inventor: Jong-Hyun Choung , Hong-Sick Park , Joo-Ae Youn , Sun-Young Hong , Bong-Kyun Kim , Won-Suk Shin , Byeong-Jin Lee
- Applicant: Jong-Hyun Choung , Hong-Sick Park , Joo-Ae Youn , Sun-Young Hong , Bong-Kyun Kim , Won-Suk Shin , Byeong-Jin Lee
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Innovation Counsel LLP
- Priority: KR10-2006-0114990 20061121
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A thin film transistor array and method of manufacturing the same include a pixel electrode formed of a transparent conductive layer on a substrate, a gate line formed of the transparent conductive layer and an opaque conductive layer on the substrate, a gate electrode connected to the gate line and formed of the transparent conductive layer and an opaque conductive layer on the substrate, a gate insulating layer which covers the gate line and the gate electrode, a semiconductor layer formed on the gate insulating layer to overlap the gate electrode, a data line which intersects the gate line, a source electrode connected to the data line to overlap a part of the semiconductor layer, and a drain electrode connected to the pixel electrode to overlap a part of the semiconductor layer.
Public/Granted literature
- US20110014737A1 THIN FILM TRANSISTOR ARRAY AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2011-01-20
Information query
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