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US08173497B2 Semiconductor device preventing floating body effect in a peripheral region thereof and method for manufacturing the same 有权
防止外围区域浮体效应的半导体装置及其制造方法

  • Patent Title: Semiconductor device preventing floating body effect in a peripheral region thereof and method for manufacturing the same
  • Patent Title (中): 防止外围区域浮体效应的半导体装置及其制造方法
  • Application No.: US12333394
    Application Date: 2008-12-12
  • Publication No.: US08173497B2
    Publication Date: 2012-05-08
  • Inventor: Ki Bong Nam
  • Applicant: Ki Bong Nam
  • Applicant Address: KR Gyeonggi-do
  • Assignee: Hynix Semiconductor Inc.
  • Current Assignee: Hynix Semiconductor Inc.
  • Current Assignee Address: KR Gyeonggi-do
  • Agency: Ladas & Parry LLP
  • Priority: KR10-2008-0052886 20080605
  • Main IPC: H01L21/84
  • IPC: H01L21/84
Semiconductor device preventing floating body effect in a peripheral region thereof and method for manufacturing the same
Abstract:
A semiconductor device having a cell region and a peripheral region includes an silicon on insulator (SOI) substrate having a stack structure of a silicon substrate, a buried insulation layer, and a silicon layer. An epi-silicon layer is formed in the buried insulation layer of the peripheral region and connects a peripheral portion of a channel area of the silicon layer to the silicon substrate. A gate is formed on the silicon layer and junction areas are formed in the silicon layer on both sides of the gate.
Abstract(Chinese):

具有单元区域和周边区域的半导体器件包括具有硅衬底，掩埋绝缘层和硅层的堆叠结构的绝缘体上硅（SOI）衬底。 在外围区域的掩埋绝缘层中形成外延硅层，并且将硅层的沟道区域的周边部分连接到硅衬底。 栅极形成在硅层上，并且在栅极两侧的硅层中形成接合区域。

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IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70 .由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77 ..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78 ...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82 ....制造器件，例如每一个由许多元件组成的集成电路
H01L21/84 .....衬底不是半导体的，例如绝缘体
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