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US08173500B2 Poly-emitter type bipolar junction transistor, bipolar CMOS DMOS device, and manufacturing methods of poly-emitter type bipolar junction transistor and bipolar CMOS DMOS device 有权
多发射极型双极结型晶体管，双极CMOS DMOS器件，以及多晶硅型双极结型晶体管和双极CMOS DMOS器件的制造方法

  • Patent Title: Poly-emitter type bipolar junction transistor, bipolar CMOS DMOS device, and manufacturing methods of poly-emitter type bipolar junction transistor and bipolar CMOS DMOS device
  • Patent Title (中): 多发射极型双极结型晶体管，双极CMOS DMOS器件，以及多晶硅型双极结型晶体管和双极CMOS DMOS器件的制造方法
  • Application No.: US12546259
    Application Date: 2009-08-24
  • Publication No.: US08173500B2
    Publication Date: 2012-05-08
  • Inventor: Bon-Keun Jun
  • Applicant: Bon-Keun Jun
  • Applicant Address: KR Seoul
  • Assignee: Dongbu HiTek Co., Ltd.
  • Current Assignee: Dongbu HiTek Co., Ltd.
  • Current Assignee Address: KR Seoul
  • Agency: Sherr & Vaughn, PLLC
  • Priority: KR10-2008-0086324 20080902
  • Main IPC: H01L21/8238
  • IPC: H01L21/8238
Poly-emitter type bipolar junction transistor, bipolar CMOS DMOS device, and manufacturing methods of poly-emitter type bipolar junction transistor and bipolar CMOS DMOS device
Abstract:
A poly-emitter type bipolar transistor includes a buried layer formed over an upper portion of a semiconductor substrate, an epitaxial layer formed on the semiconductor substrate, a collector area formed on the epitaxial layer and connected to the buried layer, a base area formed at a part of an upper portion of the epitaxial layer, and a poly-emitter area formed on a surface of the semiconductor substrate in the base area and including a polysilicon material. A BCD device includes a poly-emitter type bipolar transistor having a poly-emitter area including a polysilicon material and at least one of a CMOS and a DMOS formed on a single wafer together with the poly-emitter type bipolar transistor.
Abstract(Chinese):

多射极型双极晶体管包括形成在半导体衬底的上部上的掩埋层，形成在半导体衬底上的外延层，形成在外延层上并连接到掩埋层的集电区，形成在 外延层的上部的一部分，以及形成在基极区域中的半导体衬底的表面上并包括多晶硅材料的多晶硅发射极区域。 BCD器件包括具有包括多晶硅材料的多晶硅发射极区域和与多晶硅型双极晶体管一起形成在单个晶片上的CMOS和DMOS中的至少一个的多晶硅发射极型双极晶体管。

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IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70 .由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77 ..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78 ...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82 ....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822 .....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232 ......场效应工艺
H01L21/8234 .......MIS工艺
H01L21/8238 ........互补场效应晶体管，例如CMOS
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