Method of fabricating gate electrode using a treated hard mask

Invention Grant

US08173504B2 Method of fabricating gate electrode using a treated hard mask 有权

Title translation: 使用经处理的硬掩模制造栅电极的方法

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Patent Title: Method of fabricating gate electrode using a treated hard mask
Patent Title (中): 使用经处理的硬掩模制造栅电极的方法
Application No.: US12758491

Application Date: 2010-04-12
Publication No.: US08173504B2

Publication Date: 2012-05-08
Inventor: Matt Yeh , Fan-Yi Hsu , Shun Wu Lin , Hui Ouyang , Chi-Ming Yang
Applicant: Matt Yeh , Fan-Yi Hsu , Shun Wu Lin , Hui Ouyang , Chi-Ming Yang
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Agency: Lowe Hauptman Ham & Berner, LLP
Main IPC: H01L21/8238
IPC: H01L21/8238

Method of fabricating gate electrode using a treated hard mask

Abstract:

A method for fabricating an integrated device is disclosed. A polysilicon gate electrode layer is provided on a substrate. In an embodiment, a treatment is provided on the polysilicon gate electrode layer to introduce species in the gate electrode layer and form an electrically neutralized portion therein. Then, a hard mask layer with limited thickness is applied on the treated polysilicon gate electrode layer. A tilt angle ion implantation is thus performing on the substrate after patterning the hard mask layer and the treated polysilicon gate electrode to from a gate structure.

Abstract(Chinese):

公开了一种用于制造集成器件的方法。在基板上设置多晶硅栅电极层。在一个实施例中，在多晶硅栅极电极层上提供处理以在栅电极层中引入物质并在其中形成电中和部分。然后，将具有有限厚度的硬掩模层施加在经处理的多晶硅栅极电极层上。因此，在将硬掩模层和经处理的多晶硅栅电极图案化之后，在栅极结构上对基板进行倾斜角度离子注入。

Public/Granted literature

US20110250725A1 METHOD OF FABRICATING GATE ELECTRODE USING A TREATED HARD MASK Public/Granted day:2011-10-13

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS