Invention Grant
- Patent Title: Forming structures that include a relaxed or pseudo-relaxed layer on a substrate
- Patent Title (中): 在基材上包含松弛或假松弛层的成形结构
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Application No.: US13080436Application Date: 2011-04-05
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Publication No.: US08173512B2Publication Date: 2012-05-08
- Inventor: Bruno Ghyselen , Carlos Mazure , Emmanuel Arene
- Applicant: Bruno Ghyselen , Carlos Mazure , Emmanuel Arene
- Applicant Address: FR Bernin
- Assignee: Soitec
- Current Assignee: Soitec
- Current Assignee Address: FR Bernin
- Agency: Winston & Strawn LLP
- Priority: FR0302518 20030228
- Main IPC: H01L21/76
- IPC: H01L21/76
Abstract:
A method for forming a structure that includes a relaxed or pseudo-relaxed layer on a substrate. The method includes the steps of growing an elastically stressed layer of semiconductor material on a donor substrate; forming a glassy layer of a viscous material on the stressed layer; removing a portion of the donor substrate to form a structure that includes the glassy layer, the stressed layer and a surface layer of donor substrate material; patterning the stressed layer; and heat treating the structure at a temperature of at least a viscosity temperature of the glassy layer to relax the stressed layer and form the relaxed or pseudo-relaxed layer of the structure.
Public/Granted literature
- US20110217825A1 FORMING STRUCTURES THAT INCLUDE A RELAXED OR PSEUDO-RELAXED LAYER ON A SUBSTRATE Public/Granted day:2011-09-08
Information query
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