Invention Grant
- Patent Title: Method for manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US11709126Application Date: 2007-02-22
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Publication No.: US08173519B2Publication Date: 2012-05-08
- Inventor: Masafumi Morisue , Yasuhiro Jinbo , Gen Fujii , Hajime Kimura
- Applicant: Masafumi Morisue , Yasuhiro Jinbo , Gen Fujii , Hajime Kimura
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2006-058729 20060303
- Main IPC: H01L21/30
- IPC: H01L21/30

Abstract:
A method for manufacturing a semiconductor device includes: forming a photocatalytic layer and an organic compound layer in contact with the photocatalytic layer over a substrate having a light transmitting property; forming an element forming layer over the substrate having the light transmitting property with the photocatalytic layer and the organic compound layer in contact with the photocatalytic layer interposed therebetween; and separating the element forming layer from the substrate having the light transmitting property after the photocatalytic layer is irradiated with light through the substrate having the light transmitting property.
Public/Granted literature
- US20070207571A1 Method for manufacturing semiconductor device Public/Granted day:2007-09-06
Information query
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