Invention Grant
US08173522B2 Method and device for machining a wafer, in addition to a wafer comprising a separation layer and a support layer
有权
除了包括分离层和支撑层的晶片之外，用于加工晶片的方法和装置
- Patent Title: Method and device for machining a wafer, in addition to a wafer comprising a separation layer and a support layer
- Patent Title (中): 除了包括分离层和支撑层的晶片之外，用于加工晶片的方法和装置
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Application No.: US12359730Application Date: 2009-01-26
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Publication No.: US08173522B2Publication Date: 2012-05-08
- Inventor: Andreas Jakob , Klaus-D Vissing , Volkmar Stenzel
- Applicant: Andreas Jakob , Klaus-D Vissing , Volkmar Stenzel
- Applicant Address: US DE Eichnau
- Assignee: Thin Materials AG
- Current Assignee: Thin Materials AG
- Current Assignee Address: US DE Eichnau
- Agency: Roylance, Abrams, Berdo & Goodman, L.L.P.
- Priority: DE10256247 20021129; DE10353530 20031114
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A process and an apparatus are described for the treatment of wafers, in particular for the thinning of wafers. A wafer with a carrier layer and an interlayer arranged between the carrier layer and the wafer is also described, in which the interlayer is a plasmapolymeric layer that adheres to the wafer and adheres more strongly to the carrier layer than to the wafer.
Public/Granted literature
Information query
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