Invention Grant
- Patent Title: Method of removing heavy metal in semiconductor substrate
- Patent Title (中): 去除半导体衬底中重金属的方法
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Application No.: US12899338Application Date: 2010-10-06
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Publication No.: US08173523B2Publication Date: 2012-05-08
- Inventor: Noritomo Mitsugi , Masataka Hourai , Shuichi Samata , Kiyoshi Nagai , Kei Matsumoto
- Applicant: Noritomo Mitsugi , Masataka Hourai , Shuichi Samata , Kiyoshi Nagai , Kei Matsumoto
- Applicant Address: JP Tokyo
- Assignee: Sumco Corporation
- Current Assignee: Sumco Corporation
- Current Assignee Address: JP Tokyo
- Agency: Nutter McClennen & Fish LLP
- Agent Thomas J. Engellenner
- Priority: JP2009-235340 20091009
- Main IPC: H01L21/322
- IPC: H01L21/322
Abstract:
To provide a method of removing a heavy metal contained in a thinned semiconductor substrate.A method of removing a heavy metal in a semiconductor substrate of the present invention comprises: attaching, to a rear surface of the semiconductor substrate, a material that lowers a potential barrier of the rear surface of the semiconductor substrate, on a front surface of which a circuit is to be formed or is formed; applying a thermal treatment to the semiconductor substrate under a condition based on a thickness and a resistivity of the semiconductor substrate; and, depositing the heavy metal in the semiconductor substrate on the rear surface.
Public/Granted literature
- US20110086494A1 METHOD OF REMOVING HEAVY METAL IN SEMICONDUCTOR SUBSTRATE Public/Granted day:2011-04-14
Information query
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