Invention Grant
US08173526B2 Method for providing a nanoscale, high electron mobility transistor (HEMT) on insulator
有权
用于在绝缘体上提供纳米尺度的高电子迁移率晶体管（HEMT）的方法
- Patent Title: Method for providing a nanoscale, high electron mobility transistor (HEMT) on insulator
- Patent Title (中): 用于在绝缘体上提供纳米尺度的高电子迁移率晶体管（HEMT）的方法
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Application No.: US12489353Application Date: 2009-06-22
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Publication No.: US08173526B2Publication Date: 2012-05-08
- Inventor: Darwin G. Enicks
- Applicant: Darwin G. Enicks
- Applicant Address: US CA San Jose
- Assignee: Atmel Corporation
- Current Assignee: Atmel Corporation
- Current Assignee Address: US CA San Jose
- Agency: Fish & Richardson P.C.
- Main IPC: H01L21/04
- IPC: H01L21/04
Abstract:
Various embodiments include forming a silicon-germanium layer over a substrate of a device; forming a layer in the silicon-germanium layer, the layer including at least one of boron and carbon; and forming a silicon layer over the silicon-germanium layer. Additional embodiments are described.
Public/Granted literature
- US20090258478A1 METHOD FOR PROVIDING A NANOSCALE, HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) ON INSULATOR Public/Granted day:2009-10-15
Information query
IPC分类:
