A manufacture method for a gallium-doped monocrystalline silicon solar cell is provided. The method includes classifying the sheets of gallium-doped monocrystalline silicon according to resistivity; texturing and washing the sheets of gallium-doped monocrystalline silicon; diffusing the classified, textured and washed sheets of gallium-doped monocrystalline silicon; etching and depositing the sheets of gallium-doped monocrystalline silicon; and metalizing the sheets of gallium-doped monocrystalline silicon. Advantageously, Light Induced Degradation (LID) is efficiently, economically and conveniently suppressed, the light induced efficiency degradation of monocrystalline silicon solar cell can be controlled within 1%, and meanwhile, the effect of the uneven resistivity distribution of gallium-doped monocrystalline on the cell process is reduced.