Invention Grant
- Patent Title: Semiconductor device manufacturing method
- Patent Title (中): 半导体器件制造方法
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Application No.: US12805506Application Date: 2010-08-03
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Publication No.: US08173529B2Publication Date: 2012-05-08
- Inventor: Masahito Kanamura , Toshihide Kikkawa
- Applicant: Masahito Kanamura , Toshihide Kikkawa
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Kratz, Quintos & Hanson, LLP
- Priority: JP2007-035346 20070215
- Main IPC: H01L21/28
- IPC: H01L21/28
Abstract:
In an MIS-type GaN-FET, a base layer made of a conductive nitride including no oxygen, here, TaN, is provided on a surface layer as a nitride semiconductor layer to cover at least an area of a lower face of a gate insulation film made of Ta2O5 under a gate electrode.
Public/Granted literature
- US20100311233A1 Semiconductor device manufacturing method Public/Granted day:2010-12-09
Information query
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