Invention Grant
US08173537B1 Methods for reducing UV and dielectric diffusion barrier interaction
有权
减少紫外和介电扩散屏障相互作用的方法
- Patent Title: Methods for reducing UV and dielectric diffusion barrier interaction
- Patent Title (中): 减少紫外和介电扩散屏障相互作用的方法
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Application No.: US11693617Application Date: 2007-03-29
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Publication No.: US08173537B1Publication Date: 2012-05-08
- Inventor: Kaushik Chattopadhyay , Keith Fox , Tom Mountsier , Hui-Jung Wu , Bart van Schravendijk , Kimberly Branshaw
- Applicant: Kaushik Chattopadhyay , Keith Fox , Tom Mountsier , Hui-Jung Wu , Bart van Schravendijk , Kimberly Branshaw
- Applicant Address: US CA San Jose
- Assignee: Novellus Systems, Inc.
- Current Assignee: Novellus Systems, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Weaver Austin Villeneuve & Sampson LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/532
Abstract:
Stability of an underlying dielectric diffusion barrier during deposition and ultraviolet (UV) processing of an overlying dielectric layer is critical for successful integration. UV-resistant diffusion barrier layers are formed by depositing the layer in a hydrogen-starved environment. Diffusion barrier layers can be made more resistant to UV radiation by thermal, plasma, or UV treatment during or after deposition. Lowering the modulus of the diffusion barrier layer can also improve the resistance to UV radiation.
Information query
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