Chip carrier substrate including capacitor and method for fabrication thereof

Invention Grant

US08173541B2 Chip carrier substrate including capacitor and method for fabrication thereof 有权

Title translation: 包括电容器的芯片载体衬底及其制造方法

Please log in to see more content

Patent Title: Chip carrier substrate including capacitor and method for fabrication thereof
Patent Title (中): 包括电容器的芯片载体衬底及其制造方法
Application No.: US12542269

Application Date: 2009-08-17
Publication No.: US08173541B2

Publication Date: 2012-05-08
Inventor: Paul S. Andry , Chirag S. Patel
Applicant: Paul S. Andry , Chirag S. Patel
Applicant Address: US NY Armonk
Assignee: International Business Machines Corporation
Current Assignee: International Business Machines Corporation
Current Assignee Address: US NY Armonk
Agency: Scully, Scott, Murphy & Presser, P.C.
Agent Vazken Alexanian
Main IPC: H01L21/4763
IPC: H01L21/4763

Chip carrier substrate including capacitor and method for fabrication thereof

Abstract:

A chip carrier substrate includes a capacitor aperture and a laterally separated via aperture, each located within a substrate. The capacitor aperture is formed with a narrower linewidth and shallower depth than the via aperture incident to a microloading effect within a plasma etch method that is used for simultaneously etching the capacitor aperture and the via aperture within the substrate. Subsequently a capacitor is formed and located within the capacitor aperture and a via is formed and located within the via apertures. Various combinations of a first capacitor plate layer, a capacitor dielectric layer and a second capacitor plate layer may be contiguous with respect to the capacitor aperture and the via aperture.

Abstract(Chinese):

芯片载体衬底包括电容器孔和横向分离的通孔，每个位于衬底内。在用于同时蚀刻电容器孔径和衬底内的通孔孔径的等离子体蚀刻方法中，电容器孔径形成为比入射到微负载效应的通孔孔更窄的线宽和更浅的深度。随后形成电容器并且位于电容器孔内并形成通孔并且位于通孔内。第一电容器板层，电容器电介质层和第二电容器板层的各种组合可以相对于电容器孔径和通孔孔连续。

Public/Granted literature

US20090301992A1 CHIP CARRIER SUBSTRATE INCLUDING CAPACITOR AND METHOD FOR FABRICATION THEREOF Public/Granted day:2009-12-10

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）