Invention Grant
- Patent Title: Method for the fabrication of a transistor gate using at least one electron beam
- Patent Title (中): 使用至少一个电子束制造晶体管栅极的方法
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Application No.: US12299038Application Date: 2007-05-03
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Publication No.: US08173545B2Publication Date: 2012-05-08
- Inventor: Thomas Ernst , Stéfan Landis
- Applicant: Thomas Ernst , Stéfan Landis
- Applicant Address: FR Paris
- Assignee: Commissariat a l'Energie Atomique
- Current Assignee: Commissariat a l'Energie Atomique
- Current Assignee Address: FR Paris
- Agency: Pearne & Gordon LLP
- Priority: FR0651616 20060504
- International Application: PCT/EP2007/054314 WO 20070503
- International Announcement: WO2007/128780 WO 20071115
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A microelectronic method for the fabrication of a transistor gate using a precursor material that is suitable for being broken down into at least one metallic material after having been exposed to an electron beam. The invention applies in particular to the fabrication of multi-channel transistors, of the FinFET, suspended-channel, ITS or GAA type.
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