Defect reduction using aspect ratio trapping

Invention Grant

US08173551B2 Defect reduction using aspect ratio trapping 有权

Title translation: 缺陷减少使用纵横比捕获

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Patent Title: Defect reduction using aspect ratio trapping
Patent Title (中): 缺陷减少使用纵横比捕获
Application No.: US11852078

Application Date: 2007-09-07
Publication No.: US08173551B2

Publication Date: 2012-05-08
Inventor: Jie Bai , Ji-Soo Park , Anthony J. Lochtefeld
Applicant: Jie Bai , Ji-Soo Park , Anthony J. Lochtefeld
Applicant Address: TW Hsin-Chu
Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
Current Assignee Address: TW Hsin-Chu
Agency: Slater & Matsil, L.L.P.
Main IPC: H01L21/31
IPC: H01L21/31

Defect reduction using aspect ratio trapping

Abstract:

Lattice-mismatched epitaxial films formed proximate non-crystalline sidewalls. Embodiments of the invention include formation of facets that direct dislocations in the films to the sidewalls.

Abstract(Chinese):

在非晶体侧壁附近形成晶格不匹配的外延膜。本发明的实施例包括形成将薄膜中的位错引导到侧壁的小平面。

Public/Granted literature

US20080099785A1 Defect Reduction Using Aspect Ratio Trapping Public/Granted day:2008-05-01

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择