Invention Grant
- Patent Title: Epitaxial wafer and production method thereof
- Patent Title (中): 外延晶片及其制造方法
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Application No.: US12483439Application Date: 2009-06-12
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Publication No.: US08173553B2Publication Date: 2012-05-08
- Inventor: Yoshiro Aoki , Noashi Adachi , Akihiko Endo , Yoshihisa Nonogaki
- Applicant: Yoshiro Aoki , Noashi Adachi , Akihiko Endo , Yoshihisa Nonogaki
- Applicant Address: JP Tokyo
- Assignee: Sumco Corporation
- Current Assignee: Sumco Corporation
- Current Assignee Address: JP Tokyo
- Agency: Greenblum & Bernstein, P.L.C.
- Priority: JP2008-161026 20080619
- Main IPC: H01L21/322
- IPC: H01L21/322
Abstract:
A small amount of oxygen is ion-implanted in a wafer surface layer, and then heat treatment is performed so as to form an incomplete implanted oxide film in the surface layer. Thereby, wafer cost is reduced; a pit is prevented from forming in a surface of an epitaxial film; and a slip is prevented from forming in an external peripheral portion of a wafer.
Public/Granted literature
- US20090321874A1 EPITAXIAL WAFER AND PRODUCTION METHOD THEREOF Public/Granted day:2009-12-31
Information query
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