Invention Grant
- Patent Title: Polar semiconductor hole transporting material
- Patent Title (中): 极性半导体空穴传输材料
-
Application No.: US11664745Application Date: 2005-10-11
-
Publication No.: US08173996B2Publication Date: 2012-05-08
- Inventor: Carl R. Towns , Mary J. McKiernan , Annette Steudel
- Applicant: Carl R. Towns , Caroline Towns, legal representative , Mary J. McKiernan , Annette Steudel
- Applicant Address: GB Cambridgeshire GB Cambridgeshire
- Assignee: Cambridge Display Technology Limited,CDT Oxford Limited
- Current Assignee: Cambridge Display Technology Limited,CDT Oxford Limited
- Current Assignee Address: GB Cambridgeshire GB Cambridgeshire
- Agency: Marshall, Gerstein & Borun LLP
- Priority: GB0422550.4 20041011; GB0514498.5 20050714
- International Application: PCT/GB2005/003892 WO 20051011
- International Announcement: WO2006/040530 WO 20060420
- Main IPC: H01L51/00
- IPC: H01L51/00
Abstract:
A semiconductive hole transport material containing polar substituent groups, the polar substituent groups substantially not affecting the electronic properties of the hole transport material and the hole transport material being soluble in a polar solvent.
Public/Granted literature
- US20090152531A1 Polar semiconductor hole transporting material Public/Granted day:2009-06-18
Information query
IPC分类:
