Invention Grant
US08174006B2 Semiconductor device and manufacturing method thereof and method for writing memory element
有权
半导体装置及其制造方法以及写入存储元件的方法
- Patent Title: Semiconductor device and manufacturing method thereof and method for writing memory element
- Patent Title (中): 半导体装置及其制造方法以及写入存储元件的方法
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Application No.: US12874574Application Date: 2010-09-02
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Publication No.: US08174006B2Publication Date: 2012-05-08
- Inventor: Shunpei Yamazaki
- Applicant: Shunpei Yamazaki
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2005-147599 20050520
- Main IPC: H01L35/24
- IPC: H01L35/24

Abstract:
An object is to provide a higher-performance and higher-reliability memory device and a semiconductor device provided with the memory device at low cost and with high yield. A semiconductor device of the invention has a memory element including an insulating layer and an organic compound layer between first and second conductive layers. When melting, an organic compound of the organic compound layer aggregates due to surface tension of the organic compound. By applying a voltage to the first and second conductive layers, writing to the memory element is carried out.
Public/Granted literature
- US20100328989A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF AND METHOD FOR WRITING MEMORY ELEMENT Public/Granted day:2010-12-30
Information query
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