Invention Grant
- Patent Title: High efficiency group III nitride LED with lenticular surface
- Patent Title (中): 高效率III族氮化物LED带透镜表面
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Application No.: US11082470Application Date: 2005-03-17
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Publication No.: US08174037B2Publication Date: 2012-05-08
- Inventor: John Adam Edmond , David Beardsley Slater, Jr. , Jayesh Bharathan , Matthew Donofrio
- Applicant: John Adam Edmond , David Beardsley Slater, Jr. , Jayesh Bharathan , Matthew Donofrio
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
A high efficiency Group III nitride light emitting diode is disclosed. The diode includes a substrate selected from the group consisting of semiconducting and conducting materials, a Group III nitride-based light emitting region on or above the substrate, and, a lenticular surface containing silicon carbide on or above the light emitting region.
Public/Granted literature
- US20060060874A1 High efficiency group III nitride LED with lenticular surface Public/Granted day:2006-03-23
Information query
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