Invention Grant
- Patent Title: III-nitride current control device and method of manufacture
- Patent Title (中): III族氮化物电流控制装置及其制造方法
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Application No.: US11040312Application Date: 2005-01-21
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Publication No.: US08174048B2Publication Date: 2012-05-08
- Inventor: Robert Beach
- Applicant: Robert Beach
- Applicant Address: US CA El Segundo
- Assignee: International Rectifier Corporation
- Current Assignee: International Rectifier Corporation
- Current Assignee Address: US CA El Segundo
- Agency: Farjami & Farjami LLP
- Main IPC: H01L29/66
- IPC: H01L29/66

Abstract:
A III-nitride device includes a recessed electrode to produce a nominally off, or an enhancement mode, device. By providing a recessed electrode, a conduction channel formed at the interface of two III-nitride materials is interrupted when the electrode contact is inactive to prevent current flow in the device. The electrode can be a schottky contact or an insulated metal contact. Two ohmic contacts can be provided to form a rectifier device with nominally off characteristics. The recesses formed with the electrode can have sloped sides. The electrode can be formed in a number of geometries in conjunction with current carrying electrodes of the device. A nominally on device, or pinch resistor, is formed when the electrode is not recessed. A diode is also formed by providing non-recessed ohmic and schottky contacts through an insulator to an AlGaN layer.
Public/Granted literature
- US20050194612A1 III-Nitride current control device and method of manufacture Public/Granted day:2005-09-08
Information query
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