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Invention Grant
US08174053B2 Semiconductor device, production method thereof, and electronic device 有权
半导体装置及其制造方法以及电子装置

  • Patent Title: Semiconductor device, production method thereof, and electronic device
  • Patent Title (中): 半导体装置及其制造方法以及电子装置
  • Application No.: US12438394
    Application Date: 2007-06-04
  • Publication No.: US08174053B2
    Publication Date: 2012-05-08
  • Inventor: Hidehito Kitakado
  • Applicant: Hidehito Kitakado
  • Applicant Address: JP Osaka
  • Assignee: Sharp Kabushiki Kaisha
  • Current Assignee: Sharp Kabushiki Kaisha
  • Current Assignee Address: JP Osaka
  • Agency: Nixon & Vanderhye P.C.
  • Priority: JP2006-244516 20060908
  • International Application: PCT/JP2007/061313 WO 20070604
  • International Announcement: WO2008/029544 WO 20080313
  • Main IPC: H01L29/10
  • IPC: H01L29/10
Semiconductor device, production method thereof, and electronic device
Abstract:
The present invention provides a semiconductor device which includes a thin film transistor as a resistance element, wherein a variation in resistance of the thin film transistor is suppressed without increasing an area of the resistance element and the resistance element can be produced through simplified production steps. The semiconductor device of the present invention is a semiconductor device including a first thin film transistor and a second thin film transistor on a substrate, the first thin film transistor being used as a resistance element, the second thin film transistor including a semiconductor layer having a low concentration drain region and a high concentration drain region, the low concentration drain region and the high concentration drain region being different in impurity concentration, wherein an impurity concentration of a channel region of a semiconductor layer in the first thin film transistor is the same as an impurity concentration of the low concentration drain region of the semiconductor layer in the second thin film transistor.
Abstract(Chinese):

本发明提供一种半导体器件，其包括作为电阻元件的薄膜晶体管，其中抑制薄膜晶体管的电阻变化而不增加电阻元件的面积，并且可以通过简化的制造步骤来制造电阻元件。 本发明的半导体器件是在衬底上包括第一薄膜晶体管和第二薄膜晶体管的半导体器件，第一薄膜晶体管用作电阻元件，第二薄膜晶体管包括具有 低浓度漏极区域和高浓度漏极区域，低浓度漏极区域和高浓度漏极区域的杂质浓度不同，其中第一薄膜晶体管中的半导体层的沟道区域的杂质浓度与 第二薄膜晶体管中的半导体层的低浓度漏极区的杂质浓度。

Public/Granted literature
Information query
Espacenet
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/02 .按其半导体本体的特征区分的
H01L29/06 ..按其形状区分的；按各半导体区域的形状、相对尺寸或配置区分的
H01L29/10 ...具有连接到1个不通有待整流、放大或切换的电流的电极上去的半导体区域的；并且这样的电极又是包含3个或更多个电极的半导体器件的组成部分的
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