Invention Grant
- Patent Title: Floating-gate structure with dielectric component
- Patent Title (中): 具有介质成分的浮栅结构
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Application No.: US12364809Application Date: 2009-02-03
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Publication No.: US08174061B2Publication Date: 2012-05-08
- Inventor: Chandra Mouli , Gurtej S. Sandhu
- Applicant: Chandra Mouli , Gurtej S. Sandhu
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Leffert Jay & Polglaze, P.A.
- Main IPC: H01L29/788
- IPC: H01L29/788
Abstract:
Floating-gate memory cells having a floating gate with a conductive portion and a dielectric portion facilitate increased levels of charge trapping sites within the floating gate. The conductive portion includes a continuous component providing bulk conductivity to the floating gate. The dielectric portion is discontinuous within the conductive portion and may include islands of dielectric material and/or one or more contiguous layers of dielectric material having discontinuities.
Public/Granted literature
- US20090134443A1 FLOATING-GATE STRUCTURE WITH DIELECTRIC COMPONENT Public/Granted day:2009-05-28
Information query
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