Trench-based power semiconductor devices with increased breakdown voltage characteristics

Invention Grant

US08174067B2 Trench-based power semiconductor devices with increased breakdown voltage characteristics 有权

Title translation: 基于沟槽的功率半导体器件具有增加的击穿电压特性

Patent Title: Trench-based power semiconductor devices with increased breakdown voltage characteristics
Patent Title (中): 基于沟槽的功率半导体器件具有增加的击穿电压特性
Application No.: US12417586

Application Date: 2009-04-02
Publication No.: US08174067B2

Publication Date: 2012-05-08
Inventor: Joseph A. Yedinak , Daniel Calafut , Dean E. Probst
Applicant: Joseph A. Yedinak , Daniel Calafut , Dean E. Probst
Applicant Address: US ME South Portland
Assignee: Fairchild Semiconductor Corporation
Current Assignee: Fairchild Semiconductor Corporation
Current Assignee Address: US ME South Portland
Agency: Kilpatrick Townsend & Stockton LLP
Main IPC: H01L29/66
IPC: H01L29/66

Abstract:

Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed.

Abstract(Chinese):

公开了具有提供增加的击穿电压和其他益处的特征的示例性功率半导体器件。

Public/Granted literature

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的