Invention Grant
- Patent Title: Semiconductor device having a silicide gate electrode
- Patent Title (中): 具有硅化物栅电极的半导体器件
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Application No.: US12926430Application Date: 2010-11-17
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Publication No.: US08174079B2Publication Date: 2012-05-08
- Inventor: Tomonori Aoyama
- Applicant: Tomonori Aoyama
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2005-346464 20051130
- Main IPC: H01L27/092
- IPC: H01L27/092
Abstract:
A semiconductor device includes a semiconductor substrate; a gate insulation film formed on the semiconductor substrate; a silicide gate electrode of an n-type MISFET formed on the gate insulation film; and a silicide gate electrode of a p-type MISFET formed on the gate insulation film and having a thickness smaller than that of the silicide gate electrode of the n-type MISFET, the silicide gate electrode of the p-type MISFET having a ratio of metal content higher than that of the silicide gate electrode of the n-type MISFET.
Public/Granted literature
- US20110062528A1 Semiconductor device and semiconductor device manufacturing method Public/Granted day:2011-03-17
Information query
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