Invention Grant
- Patent Title: Magnetoresistive element, and magnetic random access memory
- Patent Title (中): 磁阻元件和磁性随机存取存储器
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Application No.: US12739990Application Date: 2008-10-28
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Publication No.: US08174086B2Publication Date: 2012-05-08
- Inventor: Shunsuke Fukami , Nobuyuki Ishiwata , Tetsuhiro Suzuki , Kiyokazu Nagahara , Norikazu Ohshima
- Applicant: Shunsuke Fukami , Nobuyuki Ishiwata , Tetsuhiro Suzuki , Kiyokazu Nagahara , Norikazu Ohshima
- Applicant Address: JP Tokyo
- Assignee: NEC Corporation
- Current Assignee: NEC Corporation
- Current Assignee Address: JP Tokyo
- Priority: JP2007-287901 20071105
- International Application: PCT/JP2008/069498 WO 20081028
- International Announcement: WO2009/060749 WO 20090514
- Main IPC: H01L29/82
- IPC: H01L29/82 ; G11C11/02

Abstract:
A magnetoresistive element is provided with a first magnetization free layer; a second magnetization free layer; a non-magnetic layer disposed adjacent to the second magnetization free layer; and a first magnetization fixed layer disposed adjacent to the second magnetization free layer on an opposite side of the second magnetization free layer. The first magnetization free layer is formed of ferromagnetic material and has a magnetic anisotropy in a thickness direction. On the other hand, the second magnetization free layer and the first magnetization fixed layer are formed of ferromagnetic material and have a magnetic anisotropy in an in-plane direction. The first magnetization free layer includes: a first magnetization fixed region having a fixed magnetization; a second magnetization fixed region having a fixed magnetization; and a magnetization free region connected to the first and second magnetization fixed regions and having a reversible magnetization. The magnetization free region and the second magnetization free layer are magnetically coupled. In addition, the center of mass of the magnetization free region and the center of mass of the second magnetization free layer are displaced in a particular in-plane direction.
Public/Granted literature
- US20100237449A1 MAGNETORESISTIVE ELEMENT, AND MAGNETIC RANDOM ACCESS MEMORY Public/Granted day:2010-09-23
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