Invention Grant
- Patent Title: High voltage switching devices and process for forming same
- Patent Title (中): 高压开关器件及其形成工艺
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Application No.: US12852223Application Date: 2010-08-06
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Publication No.: US08174089B2Publication Date: 2012-05-08
- Inventor: Jeffrey S. Flynn , George R. Brandes , Robert P. Vaudo
- Applicant: Jeffrey S. Flynn , George R. Brandes , Robert P. Vaudo
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Jenkins, Wilson, Taylor & Hunt
- Agent Vincent K. Gustafson
- Main IPC: H01L29/20
- IPC: H01L29/20
Abstract:
The present invention relates to various switching device structures including Schottky diode, P—N diode, and P—I—N diode, which are characterized by low defect density, low crack density, low pit density and sufficient thickness (>2.5 um) GaN layers of low dopant concentration ( 2 KV).
Public/Granted literature
- US20100301351A1 HIGH VOLTAGE SWITCHING DEVICES AND PROCESS FOR FORMING SAME Public/Granted day:2010-12-02
Information query
IPC分类:
