Invention Grant
- Patent Title: Integrated circuit device with low capacitance and high thermal conductivity interface
- Patent Title (中): 具有低电容和高导热性界面的集成电路器件
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Application No.: US12544850Application Date: 2009-08-20
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Publication No.: US08174112B1Publication Date: 2012-05-08
- Inventor: James Karp , Vassili Kireev
- Applicant: James Karp , Vassili Kireev
- Applicant Address: US CA San Jose
- Assignee: Xilinx, Inc.
- Current Assignee: Xilinx, Inc.
- Current Assignee Address: US CA San Jose
- Agent Kenneth Glass; LeRoy D. Maunu; Lois D. Cartier
- Main IPC: H01L23/34
- IPC: H01L23/34

Abstract:
An integrated circuit device includes an integrated circuit formed in a semiconductor die and an integrated circuit package containing the semiconductor die. The integrated circuit package includes a thermal interface material substantially between the semiconductor die and a heat spreader of the integrated circuit device for conducting heat from the semiconductor die to the heat spreader. The thermal interface material includes diamond particles and has a thickness selected to reduce capacitance between the semiconductor die and the heat spreader over that of a conventional integrated circuit device without reducing the rate of thermal conduction from the semiconductor die to the heat spreader. As a result, the integrated circuit device has improved electrostatic discharge immunity.
Information query
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