Invention Grant
US08174112B1 Integrated circuit device with low capacitance and high thermal conductivity interface 有权
具有低电容和高导热性界面的集成电路器件

  • Patent Title: Integrated circuit device with low capacitance and high thermal conductivity interface
  • Patent Title (中): 具有低电容和高导热性界面的集成电路器件
  • Application No.: US12544850
    Application Date: 2009-08-20
  • Publication No.: US08174112B1
    Publication Date: 2012-05-08
  • Inventor: James KarpVassili Kireev
  • Applicant: James KarpVassili Kireev
  • Applicant Address: US CA San Jose
  • Assignee: Xilinx, Inc.
  • Current Assignee: Xilinx, Inc.
  • Current Assignee Address: US CA San Jose
  • Agent Kenneth Glass; LeRoy D. Maunu; Lois D. Cartier
  • Main IPC: H01L23/34
  • IPC: H01L23/34
Integrated circuit device with low capacitance and high thermal conductivity interface
Abstract:
An integrated circuit device includes an integrated circuit formed in a semiconductor die and an integrated circuit package containing the semiconductor die. The integrated circuit package includes a thermal interface material substantially between the semiconductor die and a heat spreader of the integrated circuit device for conducting heat from the semiconductor die to the heat spreader. The thermal interface material includes diamond particles and has a thickness selected to reduce capacitance between the semiconductor die and the heat spreader over that of a conventional integrated circuit device without reducing the rate of thermal conduction from the semiconductor die to the heat spreader. As a result, the integrated circuit device has improved electrostatic discharge immunity.
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