Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12199155Application Date: 2008-08-27
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Publication No.: US08174121B2Publication Date: 2012-05-08
- Inventor: Min Dae Hong
- Applicant: Min Dae Hong
- Applicant Address: KR Seoul
- Assignee: Dongbu Electronics Co. Ltd.
- Current Assignee: Dongbu Electronics Co. Ltd.
- Current Assignee Address: KR Seoul
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner LLP
- Priority: KR10-2005-0109010 20051115
- Main IPC: H01L23/532
- IPC: H01L23/532
Abstract:
A semiconductor device is provided. The semiconductor device includes a substrate in which a first interlayer insulation layer having a first via hole and a first trench is formed. The semiconductor device also includes a first via plug and a first metal line respectively formed by filling the first via hole and the first trench with a first metal, a predetermined scratch being formed on the first metal line; and a second via plug a second metal line respectively formed by filling a second via hole and a second trench with a second metal, the second metal lines being separated.
Public/Granted literature
- US20090020875A1 Semiconductor Device and Manufacturing Method Thereof Public/Granted day:2009-01-22
Information query
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