Invention Grant
- Patent Title: Semiconductor device having a filled trench structure and methods for fabricating the same
- Patent Title (中): 具有填充沟槽结构的半导体器件及其制造方法
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Application No.: US12472884Application Date: 2009-05-27
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Publication No.: US08174131B2Publication Date: 2012-05-08
- Inventor: Zhen Zhang , Frank Kuechenmeister , Jaime Bravo , Michael Su , Ranjit Gannamani , Kevin Lim
- Applicant: Zhen Zhang , Frank Kuechenmeister , Jaime Bravo , Michael Su , Ranjit Gannamani , Kevin Lim
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L29/40 ; H01L23/29 ; H01L21/00
Abstract:
Methods are provided for packaging a semiconductor die having a first surface. In accordance with an exemplary embodiment, a method comprises the steps of forming a trench in the first surface of the die, electrically and physically coupling the die to a packaging substrate, forming a sealant layer on the first surface of the die, forming an engagement structure within the trench, and infusing underfill between the sealant layer and the engagement structure and the packaging substrate.
Public/Granted literature
- US20100301460A1 SEMICONDUCTOR DEVICE HAVING A FILLED TRENCH STRUCTURE AND METHODS FOR FABRICATING THE SAME Public/Granted day:2010-12-02
Information query
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