Invention Grant
- Patent Title: Surface acoustic wave device and manufacturing method of the same surface acoustic wave device
- Patent Title (中): 声表面波装置及相同声表面波装置的制造方法
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Application No.: US12720778Application Date: 2010-03-10
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Publication No.: US08174165B2Publication Date: 2012-05-08
- Inventor: Hidekazu Nakanishi , Hiroyuki Nakamura , Yukio Iwasaki
- Applicant: Hidekazu Nakanishi , Hiroyuki Nakamura , Yukio Iwasaki
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JP2009-057687 20090311
- Main IPC: H03H9/25
- IPC: H03H9/25 ; H01L41/22

Abstract:
A surface acoustic wave device includes a piezoelectric element, an IDT electrode formed on the piezoelectric element for exciting a principal wave, a reflection film formed on the piezoelectric element having a higher reflectivity than the reflectivity of the piezoelectric element in a visible light wavelength region, and a light permeable dielectric layer formed on the piezoelectric element, at least a part of the IDT electrode, and the reflection film. Accordingly, when measuring the film thickness of the light permeable dielectric layer by light interference method, the reflected light from the reflection film having a higher reflectivity than the reflectivity of the piezoelectric element in a visible light wavelength region can be utilized, so that the film thickness can be measured more accurately.
Public/Granted literature
- US20100231089A1 SURFACE ACOUSTIC WAVE DEVICE AND MANUFACTURING METHOD OF THE SAME SURFACE ACOUSTIC WAVE DEVICE Public/Granted day:2010-09-16
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