Invention Grant
- Patent Title: Integrated circuit with magnetic material magnetically coupled to magneto-resistive sensing element
- Patent Title (中): 具有磁耦合到磁阻感测元件的磁性材料的集成电路
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Application No.: US12198143Application Date: 2008-08-26
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Publication No.: US08174260B2Publication Date: 2012-05-08
- Inventor: Wolfgang Raberg , Juergen Zimmer
- Applicant: Wolfgang Raberg , Juergen Zimmer
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: G01R33/02
- IPC: G01R33/02
Abstract:
An integrated circuit including a first magneto-resistive sensing element, magnetic material and a spacer. The magnetic material is situated laterally to the first magneto-resistive sensing element. The spacer is situated between the first magneto-resistive sensing element and the magnetic material. The magnetic material is magnetically coupled to the first magneto-resistive sensing element.
Public/Granted literature
- US20100052672A1 INTEGRATED CIRCUIT WITH MAGNETIC MATERIAL MAGNETICALLY COUPLED TO MAGNETO-RESISTIVE SENSING ELEMENT Public/Granted day:2010-03-04
Information query
