Invention Grant
- Patent Title: High frequency amplifier
- Patent Title (中): 高频放大器
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Application No.: US13303955Application Date: 2011-11-23
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Publication No.: US08174323B2Publication Date: 2012-05-08
- Inventor: Toshio Okuda
- Applicant: Toshio Okuda
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Leydig, Voit & Mayer, Ltd.
- Priority: JP2010-004272 20100112
- Main IPC: H03F3/04
- IPC: H03F3/04

Abstract:
A high frequency amplifier includes a package substrate, an amplifying active device disposed on a top surface of the package substrate, a transmission line connected to the amplifying active device and transmitting a high frequency signal, a surface mounted device (SMD) component shunt-connected at a first end to the transmission line, a SMD component terminal connected to a second end of the SMD component and partially exposed at a back surface of the package substrate, and an external terminal partially exposed at the back surface of the package substrate and connected to a first end of the transmission line, opposite a second end of the transmission line that is connected to the amplifying active device.
Public/Granted literature
- US20120068773A1 HIGH FREQUENCY AMPLIFIER Public/Granted day:2012-03-22
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