Invention Grant
- Patent Title: Image sensing system and method utilizing a MOSFET
- Patent Title (中): 使用MOSFET的图像感测系统和方法
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Application No.: US12354467Application Date: 2009-01-15
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Publication No.: US08174602B2Publication Date: 2012-05-08
- Inventor: John L. Vampola , Micky R. Harris
- Applicant: John L. Vampola , Micky R. Harris
- Applicant Address: US MA Waltham
- Assignee: Raytheon Company
- Current Assignee: Raytheon Company
- Current Assignee Address: US MA Waltham
- Agency: Lando & Anastasi, LLP
- Main IPC: H04N3/14
- IPC: H04N3/14 ; H04N5/335
Abstract:
A unit cell includes a MOSFET and an integration capacitor. The MOSFET includes a source, a drain, and a gate. The drain is coupled to the source, and the MOSFET is operable to store a first portion of an electric charge corresponding to a detected light intensity. The integration capacitor includes a first end and a second end. The first end is coupled to the drain of the MOSFET and the second end is coupled to a ground. The integration capacitor is operable to store a second portion of the electric charge corresponding to the detected light intensity.
Public/Granted literature
- US20100177229A1 Image Sensing System And Method Utilizing A Mosfet Public/Granted day:2010-07-15
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