Invention Grant
- Patent Title: Method of manufacturing a liquid crystal display having top gate thin film transistors wherein each gate electrode contacts an auxilliary electrode
- Patent Title (中): 制造具有顶栅极薄膜晶体管的液晶显示器的方法,其中每个栅电极接触辅助电极
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Application No.: US13166455Application Date: 2011-06-22
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Publication No.: US08174635B2Publication Date: 2012-05-08
- Inventor: Min Joo Kim , Ho Cheol Kang , Kyo Seop Choo
- Applicant: Min Joo Kim , Ho Cheol Kang , Kyo Seop Choo
- Applicant Address: KR Seoul
- Assignee: LG Display Co., Ltd.
- Current Assignee: LG Display Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Brinks Hofer Gilson & Lione
- Priority: KR0125351/2006 20061211
- Main IPC: G02F1/136
- IPC: G02F1/136 ; G02F1/13 ; H01L51/40

Abstract:
An electrostatic discharge protection element, a liquid crystal display device having the same, and a manufacturing method. A first ESD organic TFT, a second ESD organic TFT, a third ESD organic TFT each have a gate electrode, a source electrode and a drain electrode in which the source electrode and drain electrode of the first and second ESD organic TFTs and the gate electrode of the third ESD organic TFT are electrically connected. The gate electrode and the source electrode of the first ESD organic TFT are electrically connected to a first array line and the gate electrode and the drain electrode of the second ESD organic TFT are electrically connected to a second array line. The source electrode of the third ESD organic TFT is electrically connected to a data line or a gate line and the drain of the third ESD organic TFT are electrically connected to a common voltage line.
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