Invention Grant
- Patent Title: Thin film transistor substrate including a horizontal part passing through a central region between the gate lines and dividing each of the pixel regions into an upper half and a lower half
- Patent Title (中): 薄膜晶体管基板包括通过栅极线之间的中心区域的水平部分，并将每个像素区域分成上半部分和下半部分
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Application No.: US13014320Application Date: 2011-01-26
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Publication No.: US08174658B2Publication Date: 2012-05-08
- Inventor: Dong-Gyu Kim
- Applicant: Dong-Gyu Kim
- Applicant Address: KR Suwon-Si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2007-0079405 20070808
- Main IPC: G02F1/1343
- IPC: G02F1/1343
Abstract:
A thin film transistor (TFT) substrate includes: a plurality of gate lines extending in one direction, a plurality of data lines extending in a direction intersecting the gate lines, a pixel electrode formed in a pixel region defined by an intersection of the gate line and the data line, and with one side of the pixel electrode overlapping a portion of one data line and another side of the pixel electrode overlapping a portion of another data line. The TFT further includes a storage electrode line having a storage electrode disposed in a central portion of the pixel region.
Public/Granted literature
- US20110121303A1 THIN FILM TRANSISTOR AND LIQUID CRYSTAL DISPLAY HAVING THE SAME Public/Granted day:2011-05-26
Information query
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