Invention Grant
US08174882B2 Method of programming a non-volatile memory device for enhancing a channel boosting of a bit line inhibited from programming 有权
编程非易失性存储器件用于增强禁止编程的位线的通道升压的方法

  • Patent Title: Method of programming a non-volatile memory device for enhancing a channel boosting of a bit line inhibited from programming
  • Patent Title (中): 编程非易失性存储器件用于增强禁止编程的位线的通道升压的方法
  • Application No.: US13226148
    Application Date: 2011-09-06
  • Publication No.: US08174882B2
    Publication Date: 2012-05-08
  • Inventor: Ki Seog Kim
  • Applicant: Ki Seog Kim
  • Applicant Address: KR Icheon-si, Kyoungki-do
  • Assignee: Hynix Semiconductor Inc.
  • Current Assignee: Hynix Semiconductor Inc.
  • Current Assignee Address: KR Icheon-si, Kyoungki-do
  • Agency: Lowe Hauptman Ham & Berner LLP
  • Priority: KR10-2007-0138682 20071227
  • Main IPC: G11C16/04
  • IPC: G11C16/04
Method of programming a non-volatile memory device for enhancing a channel boosting of a bit line inhibited from programming
Abstract:
A method of programming a non-volatile memory device includes applying a first pass voltage to word lines in a direction of a source select line based on a first word line selected for a program operation, wherein the word lines do not include a second word line adjacent to the first word line in a direction of the source select line; and applying a first voltage, a program voltage and a second pass voltage when the first pass voltage reaches a given level. The first voltage is applied to the second word line, the program voltage is provided to the first word line, and the second pass voltage is applied to word lines in a direction of a drain select line on the basis of the first word line.
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