Invention Grant
- Patent Title: Adjusting for charge loss in a memory
- Patent Title (中): 调整存储器中的电荷损失
-
Application No.: US12763613Application Date: 2010-04-20
-
Publication No.: US08174887B2Publication Date: 2012-05-08
- Inventor: Frankie F. Roohparvar
- Applicant: Frankie F. Roohparvar
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Leffert Jay & Polglaze, P.A.
- Main IPC: G11C16/06
- IPC: G11C16/06
Abstract:
Memory and methods of operating a memory adjusting an output voltage of an analog storage device, such as a data cache capacitor holding a voltage level representative of data, in response to an estimated charge loss are useful for compensating for the effects of charge leakage from the analog storage devices.
Public/Granted literature
- US20100202202A1 ADJUSTING FOR CHARGE LOSS IN A MEMORY Public/Granted day:2010-08-12
Information query
