Invention Grant
US08174906B2 Nonvolatile memory device, program method and precharge voltage boosting method thereof, and memory system including the nonvolatile memory device
有权
非易失性存储器件，其编程方法和预充电升压方法以及包括非易失性存储器件的存储器系统
- Patent Title: Nonvolatile memory device, program method and precharge voltage boosting method thereof, and memory system including the nonvolatile memory device
- Patent Title (中): 非易失性存储器件，其编程方法和预充电升压方法以及包括非易失性存储器件的存储器系统
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Application No.: US12587803Application Date: 2009-10-13
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Publication No.: US08174906B2Publication Date: 2012-05-08
- Inventor: Ohsuk Kwon , Kihwan Choi
- Applicant: Ohsuk Kwon , Kihwan Choi
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Onello & Mello, LLP
- Priority: KR10-2008-0099942 20081013
- Main IPC: G11C7/10
- IPC: G11C7/10
Abstract:
A method of programming a nonvolatile memory device according to the present invention includes precharging bit lines according to data loaded in page buffers; electrically connecting the precharged bit lines to channels corresponding to the bit lines, respectively, to charge the channels; and applying a word line voltage for a program after charging the channels. A channel voltage boosting of each of the channels is determined according to data loaded in adjacent page buffers.
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