A nonvolatile semiconductor memory, includes a nonvolatile memory array, a voltage generator circuit that generates a drive voltage which changes depending on a supply voltage and a code, a control circuit that applies the generated drive voltage to the nonvolatile memory array, and a code output circuit that outputs any one of a plurality of codes to the voltage generator circuit, wherein the plurality of codes includes a first code and a second code, wherein the second code is different from the first code, wherein, in a first state, the code output circuit outputs the first code to the voltage generator circuit, and the voltage generator circuit generates the drive voltage according to the first code, and wherein, in a second state, the code output circuit outputs the second code to the voltage generator circuit, and the voltage generator circuit generates the drive voltage according to the second code.