Invention Grant
- Patent Title: Semiconductor memory device and driving method of the same
- Patent Title (中): 半导体存储器件及其驱动方法
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Application No.: US12703548Application Date: 2010-02-10
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Publication No.: US08174913B2Publication Date: 2012-05-08
- Inventor: Daisuke Hashimoto , Daisaburo Takashima
- Applicant: Daisuke Hashimoto , Daisaburo Takashima
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Knobbe, Martens, Olson & Bear LLC
- Priority: JP2009-211887 20090914
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C17/18 ; G11C11/22 ; G11C11/34 ; G11C8/00

Abstract:
A memory includes a cell region; a spare region including a spare block; a fuse region storing remedy information necessary for an access to the spare block instead of a remedy target block, the fuse region comprising non-defective cells in the remedy target block, or including cells in a first block of the spare region; an initial reading fuse storing a block address for identifying the remedy target block or the first block allocated as the fuse region, and a selection address for selecting a region in the remedy target block or a region in the first block allocated as the fuse region; and a controller configured to acquire the remedy information from the fuse region based on the block address and the selection address, and to change the access to the remedy target block to the access to the spare block based on the remedy information.
Public/Granted literature
- US20110063886A1 SEMICONDUCTOR MEMORY DEVICE AND DRIVING METHOD OF THE SAME Public/Granted day:2011-03-17
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