Invention Grant
- Patent Title: Method and structure for SRAM Vmin/Vmax measurement
- Patent Title (中): SRAM Vmin / Vmax测量的方法和结构
-
Application No.: US12584219Application Date: 2009-09-01
-
Publication No.: US08174914B2Publication Date: 2012-05-08
- Inventor: Xiaowei Deng , Wah Kit Loh
- Applicant: Xiaowei Deng , Wah Kit Loh
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Rose Alyssa Keagy; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
A parametric test circuit is disclosed (FIG. 8B). The test circuit includes a latch circuit having true and complementary terminals. A first access transistor (206) has a current path connected between the true terminal and a first access terminal (214) and has a first control terminal. A second access transistor (208) has a current path connected between the complementary terminal and a second access terminal (216) and has a second control terminal connected to the first control terminal. A multiplex circuit (804) is arranged to apply a first voltage (VDD1) to the first power supply terminal in response to a first state of a select signal (SEL) and to apply a second voltage (VDD2) to the first power supply terminal in response to a second state of a select signal.
Public/Granted literature
- US20110051539A1 Method and structure for SRAM VMIN/VMAX measurement Public/Granted day:2011-03-03
Information query