Invention Grant
US08174924B2 Power saving method and circuit thereof for a semiconductor memory
有权
一种用于半导体存储器的省电方法及其电路
- Patent Title: Power saving method and circuit thereof for a semiconductor memory
- Patent Title (中): 一种用于半导体存储器的省电方法及其电路
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Application No.: US12942222Application Date: 2010-11-09
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Publication No.: US08174924B2Publication Date: 2012-05-08
- Inventor: Yung-Feng Lin
- Applicant: Yung-Feng Lin
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Volpe and Koenig, P.C.
- Main IPC: G11C5/14
- IPC: G11C5/14
Abstract:
A power saving method for a semiconductor memory is provided. The power saving method for a semiconductor memory including the steps of receiving a plurality of address codes, each of which has a first part code and a second part code; and activating a first boost process when the first part code of a currently received address code is different from the first part code of a last received address code, otherwise a second boost process is activated.
Public/Granted literature
- US20110051525A1 POWER SAVING METHOD AND CIRCUIT THEREOF FOR A SEMICONDUCTOR MEMORY Public/Granted day:2011-03-03
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