Invention Grant
- Patent Title: Diode laser structure for generating diode laser radiation
- Patent Title (中): 用于产生二极管激光辐射的二极管激光器结构
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Application No.: US12854376Application Date: 2010-08-11
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Publication No.: US08175130B2Publication Date: 2012-05-08
- Inventor: Stephan Gregor Patrick Strohmaier , Christoph Tillkorn
- Applicant: Stephan Gregor Patrick Strohmaier , Christoph Tillkorn
- Applicant Address: DE Schramberg
- Assignee: TRUMPF LASER GmbH + Co. KG
- Current Assignee: TRUMPF LASER GmbH + Co. KG
- Current Assignee Address: DE Schramberg
- Agency: Fish & Richardson P.C.
- Priority: EP08002444 20080211
- Main IPC: H01S5/00
- IPC: H01S5/00

Abstract:
A diode laser structure includes multiple stripe emitters disposed next to each other, in which each of the stripe emitters is configured to emit, during operation, a laser beam having a corresponding beam parameter product with respect to a slow axis (BPPSA), where the stripe emitters are arranged such that the corresponding BPPSA of the laser beams successively decrease from a center of the diode laser structure towards a first edge of the diode laser structure and from the center of the diode laser structure towards a second edge of the diode laser structure, the second edge being opposite the first edge. The stripe emitters are oriented in a direction of the slow axis and are offset from one another in the direction of the slow axis.
Public/Granted literature
- US20110019710A1 Diode Laser Structure for Generating Diode Laser Radiation Public/Granted day:2011-01-27
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