Invention Grant
US08175131B2 Laser media with controlled concentration profile of active laser ions and method of making the same
有权
具有活性激光离子受控浓度分布的激光介质及其制备方法
- Patent Title: Laser media with controlled concentration profile of active laser ions and method of making the same
- Patent Title (中): 具有活性激光离子受控浓度分布的激光介质及其制备方法
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Application No.: US12397082Application Date: 2009-03-03
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Publication No.: US08175131B2Publication Date: 2012-05-08
- Inventor: Kevin W. Kirby , David S. Sumida
- Applicant: Kevin W. Kirby , David S. Sumida
- Applicant Address: US MA Waltham
- Assignee: Raytheon Company
- Current Assignee: Raytheon Company
- Current Assignee Address: US MA Waltham
- Main IPC: H01S3/14
- IPC: H01S3/14
Abstract:
A laser medium comprises a solid-state host material and dopant species provided within the solid-state host material. A first portion of the dopant species has a first valence state, and a second portion of the dopant species has a second valence state. In an embodiment, a concentration of the first portion of the dopant species decreases radially with increasing distance from a center of the medium, and a concentration of the second portion of the dopant species increases radially with increasing distance from the center of the medium. The laser medium further comprises impurities within the solid-state host material, the impurities converting the first portion of the dopant species having the first valence state into the second portion of dopant species having the second valence state.
Public/Granted literature
- US20100226407A1 LASER MEDIA WITH CONTROLLED CONCENTRATION PROFILE OF ACTIVE LASER IONS AND METHOD OF MAKING THE SAME Public/Granted day:2010-09-09
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