Invention Grant
- Patent Title: Laser device and lasing method
- Patent Title (中): 激光装置和激光方法
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Application No.: US10589243Application Date: 2004-08-11
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Publication No.: US08175132B2Publication Date: 2012-05-08
- Inventor: Tadashi Itoh , Masaaki Ashida
- Applicant: Tadashi Itoh , Masaaki Ashida
- Applicant Address: JP Saitama
- Assignee: Japan Science and Technology Agency
- Current Assignee: Japan Science and Technology Agency
- Current Assignee Address: JP Saitama
- Agency: Nixon & Vanderhye PC
- Priority: JP2004-037437 20040213
- International Application: PCT/JP2004/011153 WO 20040811
- International Announcement: WO2005/078881 WO 20050825
- Main IPC: H01S3/09
- IPC: H01S3/09

Abstract:
A laser device which causes lasing with a use of a semiconductor quantum dot is provided with: a laser member (11) in which the semiconductor quantum dot is formed; a resonator (14) for resonating light generated in the laser member (11); and a pump laser (15) for irradiating the laser member (11) with excitation light whose energy corresponds to two-photon resonant excitation, so as to form a biexciton state in the semiconductor quantum dot by the two-photon resonant excitation. In this way, a laser device which enables lasing using efficient light emission is realized.
Public/Granted literature
- US20090022192A1 Laser Device and Lasing Method Public/Granted day:2009-01-22
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