Invention Grant
- Patent Title: Dedicated interface to factory program phase-change memories
- Patent Title (中): 专用接口到出厂程序相变存储器
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Application No.: US12464036Application Date: 2009-05-11
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Publication No.: US08176232B2Publication Date: 2012-05-08
- Inventor: Kerry Dean Tedrow , Nicholas Hendrickson
- Applicant: Kerry Dean Tedrow , Nicholas Hendrickson
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: G06F12/00
- IPC: G06F12/00
Abstract:
A nonvolatile memory device has a dedicated serial programming port to provide a data path to memory storage. A dedicated power pin supplies power for the programming port to receive data and provide storage in the nonvolatile memory while a power pin for normal device operation is not powered.
Public/Granted literature
- US20100287435A1 DEDICATED INTERFACE TO FACTORY PROGRAM PHASE-CHANGE MEMORIES Public/Granted day:2010-11-11
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