Invention Grant
US08176235B2 Non-volatile memories with enhanced write performance and endurance
有权
具有增强的写入性能和耐用性的非易失性存储器
- Patent Title: Non-volatile memories with enhanced write performance and endurance
- Patent Title (中): 具有增强的写入性能和耐用性的非易失性存储器
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Application No.: US12631505Application Date: 2009-12-04
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Publication No.: US08176235B2Publication Date: 2012-05-08
- Inventor: Michele M. Franceschini , Ashish Jagmohan , Luis A. Lastras-Montano , Mayank Sharma
- Applicant: Michele M. Franceschini , Ashish Jagmohan , Luis A. Lastras-Montano , Mayank Sharma
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Daniel Morris
- Main IPC: G06F12/00
- IPC: G06F12/00

Abstract:
Enhanced write performance for non-volatile memories including a memory system that includes a receiver for receiving a data rate of a data sequence to be written to a non-volatile flash memory device. The memory system also includes a physical page selector for selecting a physical address of an invalid previously written memory page from a group of physical addresses of invalid previously written memory pages located on the non-volatile memory device, and for determining if the number of free bits in the invalid previously written memory page at the selected physical address is greater than or equal to the data rate. The memory system also includes a transmitter for outputting the selected physical address of the invalid previously written memory page, the outputting in response to the physical page selector determining that the number of free bits is greater than or equal to the data rate.
Public/Granted literature
- US20110138105A1 NON-VOLATILE MEMORIES WITH ENHANCED WRITE PERFORMANCE AND ENDURANCE Public/Granted day:2011-06-09
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