Invention Grant
US08176370B2 Method and system for direct access memory testing of an integrated circuit
失效
用于集成电路直接存取存储器测试的方法和系统
- Patent Title: Method and system for direct access memory testing of an integrated circuit
- Patent Title (中): 用于集成电路直接存取存储器测试的方法和系统
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Application No.: US10940146Application Date: 2004-09-13
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Publication No.: US08176370B2Publication Date: 2012-05-08
- Inventor: Jonathan Lee , Xiaogang Zhu , Andrew S. Hwang
- Applicant: Jonathan Lee , Xiaogang Zhu , Andrew S. Hwang
- Applicant Address: US CA Irvine
- Assignee: Broadcom Corporation
- Current Assignee: Broadcom Corporation
- Current Assignee Address: US CA Irvine
- Agency: Thomas, Kayden, Horstemeyer & Risley LLP.
- Main IPC: G11C29/00
- IPC: G11C29/00

Abstract:
Aspects of the invention may be found in a method and system for testing an integrated circuit and may comprise an address selector, data selector and staging register coupled to a signal generator. The address selector may comprise a direct access memory test (DAMT) mode address control input and one or more output address pins coupled to an embedded memory device under test (DUT). The data selector may be coupled to at least one data pin and control pin of the signal generator and may comprise a DAMT mode data control input and at least one data output coupled to embedded memory DUT. A staging register comprising a first output clock rate which is one-quarter (¼) its input clock rate and matches a DUT burst write frequency may be coupled to an input of the data selector. A DAMT mode control may configure the memory DUT for DAMT operation.
Public/Granted literature
- US20050060621A1 Method and system for direct access memory testing of an integrated circuit Public/Granted day:2005-03-17
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