Invention Grant
- Patent Title: Memory module and writing and reading method thereof
- Patent Title (中): 内存模块及其读写方法
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Application No.: US11945300Application Date: 2007-11-27
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Publication No.: US08176395B2Publication Date: 2012-05-08
- Inventor: Shih-Chang Huang
- Applicant: Shih-Chang Huang
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Thomas|Kayden
- Main IPC: H03M13/15
- IPC: H03M13/15 ; H03M13/00

Abstract:
A writing method of a memory module comprises temporarily storing a piece of 2m-byte data as p characters, wherein each character comprises q bits, and m, p and q are positive integers; rearranging the 2m-byte data to obtain K symbols, wherein each symbol has m bits and K is a positive integer smaller than 2m; encoding the K symbols into a codeword according to a Reed-Solomon (RS)-code algorithm, wherein the codeword comprises N symbols, the codeword has a parity code, the parity code comprises (2T=N−K) symbols, and N and T are positive integers; and writing the p characters and the parity code into a memory-cell array, wherein all the symbols belong to a finite field GF(2m).
Public/Granted literature
- US20090138781A1 MEMORY MODULE AND WRITING AND READING METHOD THEREOF Public/Granted day:2009-05-28
Information query
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