Invention Grant
- Patent Title: Process for manufacturing a magnetic tunnel junction (MTJ) device
- Patent Title (中): 制造磁性隧道结（MTJ）装置的方法
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Application No.: US12657775Application Date: 2010-01-27
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Publication No.: US08176622B2Publication Date: 2012-05-15
- Inventor: Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
- Applicant: Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
- Applicant Address: US CA Milpitas
- Assignee: MagIC Technologies, Inc.
- Current Assignee: MagIC Technologies, Inc.
- Current Assignee Address: US CA Milpitas
- Agency: Saile Ackerman LLC
- Agent Stephen B. Ackerman
- Main IPC: G11B5/127
- IPC: G11B5/127 ; H04R31/00
Abstract:
A process for manufacturing a high performance MTJ it is described: A first cap layer of NiFeHf is deposited on the free layer, followed by a second cap layer of Ru on Ta. The device is then heated so that oxygen trapped in the free layer diffuses into the NiFeHf layer, thereby sharpening the interface between the tunnel barrier layer and the free layer.
Public/Granted literature
- US20100136713A1 Hafnium doped cap and free layer for mram device Public/Granted day:2010-06-03
Information query
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